Series-
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs140mOhm @ 14.5A, 10V
Vgs(th) (Max) @ Id5V @ 960µA
Gate Charge (Qg) (Max) @ Vgs56 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2.35 nF @ 25 V
FET Feature-
Power Dissipation (Max)86W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3
Package / CaseTO-3P-3 Full Pack

RELATED PRODUCT

R6024ENZM12C8
MOSFET N-CH 600V 24A TO3
R6030ENZM12C8
MOSFET N-CH 600V 30A TO3
R6530ENZC8
MOSFET N-CH 650V 30A TO3
R6524ENZC8
MOSFET N-CH 650V 24A TO3
R6015ANZFU7C8
MOSFET N-CH 600V 15A TO3
R6520ENZC8
MOSFET N-CH 650V 20A TO3
R6515ENZC8
MOSFET N-CH 650V 15A TO3
R6515KNZC8
MOSFET N-CH 650V 15A TO3
STL36N60DM6
MOSFET N-CH 600V 15A PWRFLAT HV
TPH3206LDG-TR
GANFET N-CH 600V 17A 3PQFN