SeriesMDmesh™ DM6
PackageTape & Reel (TR)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs215mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id4.75V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds940 pF @ 100 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerFlat™ (8x8) HV
Package / Case8-PowerVDFN

RELATED PRODUCT

TPH3206LDG-TR
GANFET N-CH 600V 17A 3PQFN
TP65H150G4LSG
GAN FET N-CH 650V PQFN
TPH3206LSGB
GANFET N-CH 650V 16A 3PQFN
SI3139KL3-TP
MOSFET P-CH 20V 660MA DFN1006-3
SI3134KL3-TP
MOSFET N-CH 20V 750MA DFN1006-3
R6020ENZ4C13
MOSFET N-CH 600V 20A TO247
R6035ENZ4C13
MOSFET N-CH 600V 35A TO247