Series-
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs300mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id4.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1.7 nF @ 25 V
FET Feature-
Power Dissipation (Max)110W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3
Package / CaseTO-3P-3 Full Pack

RELATED PRODUCT

R6520ENZC8
MOSFET N-CH 650V 20A TO3
R6515ENZC8
MOSFET N-CH 650V 15A TO3
R6515KNZC8
MOSFET N-CH 650V 15A TO3
STL36N60DM6
MOSFET N-CH 600V 15A PWRFLAT HV
TPH3206LDG-TR
GANFET N-CH 600V 17A 3PQFN
TP65H150G4LSG
GAN FET N-CH 650V PQFN
TPH3206LSGB
GANFET N-CH 650V 16A 3PQFN
SI3139KL3-TP
MOSFET P-CH 20V 660MA DFN1006-3
SI3134KL3-TP
MOSFET N-CH 20V 750MA DFN1006-3