SeriesPOWER MOS 8™
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C58A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs65mOhm @ 42A, 10V
Vgs(th) (Max) @ Id5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs340 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds10800 pF @ 25 V
FET Feature-
Power Dissipation (Max)543W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSOT-227
Package / CaseSOT-227-4, miniBLOC

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