Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C53A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs70mOhm @ 25.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.72mA
Gate Charge (Qg) (Max) @ Vgs154 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4020 pF @ 25 V
FET FeatureSuper Junction
Power Dissipation (Max)417W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD3Pak
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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