SeriesPOWER MOS 8™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs530mOhm @ 9A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs120 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3760 pF @ 25 V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD3Pak
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RELATED PRODUCT

APTML20UM18R010T1AG
MOSFET N-CH 200V 109A SP1
APTML50UM90R020T1AG
MOSFET N-CH 500V 52A SP1
JAN2N6756
MOSFET N-CH 100V 14A TO204AA
JAN2N6758
MOSFET N-CH 200V 9A TO204AA
JAN2N6760
MOSFET N-CH 400V 5.5A TO204AA
JAN2N6762
MOSFET N-CH 500V 4.5A TO204AA
JAN2N6764
MOSFET N-CH 100V 38A TO204AE
JAN2N6764T1
MOSFET N-CH 100V 38A TO254AA