SeriesHEXFET®
PackageTube
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs20mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs45 nC @ 5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds2520 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.8W (Ta)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageMicro8™
Package / Case8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

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