Series-
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)500 V
Current - Continuous Drain (Id) @ 25°C5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds620 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RELATED PRODUCT

IRF840A
MOSFET N-CH 500V 8A TO220AB
IRF840AS
MOSFET N-CH 500V 8A D2PAK
IRF840L
MOSFET N-CH 500V 8A I2PAK
IRF9410
MOSFET N-CH 30V 7A 8SO
IRF9510S
MOSFET P-CH 100V 4A D2PAK
IRF9520NS
MOSFET P-CH 100V 6.8A D2PAK
IRF9520S
MOSFET P-CH 100V 6.8A D2PAK
IRF9520STRL
MOSFET P-CH 100V 6.8A D2PAK
IRF9530NS
MOSFET P-CH 100V 14A D2PAK
IRF9530S
MOSFET P-CH 100V 12A D2PAK