SeriesHEXFET®
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C17.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V
Rds On (Max) @ Id, Vgs7.5mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs86 nC @ 5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds7300 pF @ 16 V
FET Feature-
Power Dissipation (Max)3.5W (Ta)
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device Package8-SO
Package / Case8-SOIC (0.154", 3.90mm Width)

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