Series-
PackageTray
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs610mOhm @ 7A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs46 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 30 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 170W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PB
Package / CaseTO-3P-3, SC-65-3

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