Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C25A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs15.3mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id6V @ 20mA
Gate Charge (Qg) (Max) @ Vgs61 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds4.35 pF @ 10 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-LFPAK-iV
Package / Case8-PowerSOIC (0.154", 3.90mm Width)

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