Series-
PackageBag
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C20A
Drive Voltage (Max Rds On, Min Rds On)5V
Rds On (Max) @ Id, Vgs120mOhm @ 10A, 5V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 5 V
Vgs (Max)±15V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 25 V
FET FeatureLogic Level Gate, 4V Drive
Power Dissipation (Max)105W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220
Package / CaseTO-220-3

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