Series | - |
Package | Tube |
Part Status | Active |
FET Type | 2 N Channel (Phase Leg) |
FET Feature | Silicon Carbide (SiC) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 20V |
Vgs(th) (Max) @ Id | 2.7V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 137nC @ 20V |
Input Capacitance (Ciss) (Max) @ Vds | 1990pF @ 1000V |
Power - Max | 245W (Tc) |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | SP1F |