Series-
PackageTube
Part StatusActive
FET Type2 N Channel (Phase Leg)
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C173A (Tc)
Rds On (Max) @ Id, Vgs16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds6040pF @ 1000V
Power - Max745W (Tc)
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeChassis Mount
Package / CaseModule
Supplier Device PackageSP1F