SeriesCoolMOS™
PackageTube
Part StatusActive
FET Type2 N-Channel (Dual) Common Source
FET FeatureSilicon Carbide (SiC)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C58A
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds-
Power - Max-
Operating Temperature-
Mounting TypeSurface Mount
Package / Case9-SMD Power Module
Supplier Device PackageSMPD