Series-
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs150mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs88 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds3.25 nF @ 10 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3
Package / CaseTO-3P-3 Full Pack

RELATED PRODUCT

R6535ENZC8
MOSFET N-CH 650V 35A TO3
R6015ENZM12C8
MOSFET N-CH 600V 15A TO3
R6025ANZFL1C8
MOSFET N-CH 600V 25A TO3
R6535KNZC8
MOSFET N-CH 650V 35A TO3
R6020ANZFL1C8
MOSFET N-CH 600V 20A TO3
R6524KNZC8
MOSFET N-CH 650V 24A TO3
R6530KNZC8
MOSFET N-CH 650V 30A TO3
R6024ENZM12C8
MOSFET N-CH 600V 24A TO3
R6030ENZM12C8
MOSFET N-CH 600V 30A TO3
R6530ENZC8
MOSFET N-CH 650V 30A TO3