Series-
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs115mOhm @ 18.1A, 10V
Vgs(th) (Max) @ Id4V @ 1.21mA
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2.6 nF @ 25 V
FET Feature-
Power Dissipation (Max)102W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3
Package / CaseTO-3P-3 Full Pack

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