SeriesOptiMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs15 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1600 pF @ 15 V
FET Feature-
Power Dissipation (Max)42W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO251-3
Package / CaseTO-251-3 Stub Leads, IPak

RELATED PRODUCT

IXFH12N50F
MOSFET N-CH 500V 12A TO247
IXFH21N50F
MOSFET N-CH 500V 21A TO247
IXFK21N100F
MOSFET N-CH 1000V 21A TO264
IXFK24N100F
MOSFET N-CH 1000V 24A TO264
IXFK44N50F
MOSFET N-CH 500V 44A TO264
IXFN24N100F
MOSFET N-CH 1000V 24A SOT227B
IXFT12N100F
MOSFET N-CH 1000V 12A TO268
IXFT6N100F
MOSFET N-CH 1000V 6A TO268
IXFX24N100F
MOSFET N-CH 1000V 24A PLUS247-3