SeriesHiPerRF™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1000 V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs500mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id5.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs160 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds5500 pF @ 25 V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-264 (IXFK)
Package / CaseTO-264-3, TO-264AA

RELATED PRODUCT

IXFK24N100F
MOSFET N-CH 1000V 24A TO264
IXFK44N50F
MOSFET N-CH 500V 44A TO264
IXFN24N100F
MOSFET N-CH 1000V 24A SOT227B
IXFT12N100F
MOSFET N-CH 1000V 12A TO268
IXFT6N100F
MOSFET N-CH 1000V 6A TO268
IXFX24N100F
MOSFET N-CH 1000V 24A PLUS247-3
APT1001R1BN
MOSFET N-CH 1000V 10.5A TO247AD
APT1001RBN
MOSFET N-CH 1000V 11A TO247AD
APT1002RBNG
MOSFET N-CH 1000V 8A TO247AD
APT4065BNG
MOSFET N-CH 400V 11A TO247AD