SeriesOptiMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5mOhm @ 80A, 10V
Vgs(th) (Max) @ Id2.2V @ 58µA
Gate Charge (Qg) (Max) @ Vgs50 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8400 pF @ 30 V
FET Feature-
Power Dissipation (Max)115W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

RELATED PRODUCT

IPP045N10N3GHKSA1
MOSFET N-CH 100V 100A TO220-3
IPP040N06N3GHKSA1
MOSFET N-CH 60V 90A TO220-3
IPP037N08N3GHKSA1
MOSFET N-CH 80V 100A TO220-3
IPP032N06N3GHKSA1
MOSFET N-CH 60V 120A TO220-3
IPP030N10N3GHKSA1
MOSFET N-CH 100V 100A TO220-3
IPP024N06N3GHKSA1
MOSFET N-CH 60V 120A TO220-3
SIPC26N60S5X1SA1
MOSFET COOL MOS SAWED WAFER
IPB60R230P6ATMA1
MOSFET N-CH 600V 16.8A TO263-3