SeriesOptiMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs3mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.5V @ 275µA
Gate Charge (Qg) (Max) @ Vgs206 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds14800 pF @ 50 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

RELATED PRODUCT

IPP024N06N3GHKSA1
MOSFET N-CH 60V 120A TO220-3
SIPC26N60S5X1SA1
MOSFET COOL MOS SAWED WAFER
IPB60R230P6ATMA1
MOSFET N-CH 600V 16.8A TO263-3
SCH1331-TL-W
MOSFET P-CH 12V 3A SOT563/SCH6
SCH1430-TL-W
MOSFET N-CH 20V 2A SOT563/SCH6
IPP039N04LGHKSA1
MOSFET N-CH 40V 80A TO220-3
IPP50R199CPHKSA1
MOSFET N-CH 550V 17A TO220-3