SeriesDeepGATE™, STripFET™ VII
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C65A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 55A, 10V
Vgs(th) (Max) @ Id4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs117 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds8115 pF @ 50 V
FET Feature-
Power Dissipation (Max)35W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

RELATED PRODUCT

STFW24N60M2
MOSFET N-CH 600V 18A TO3PF
STI33N60M2
MOSFET N-CH 600V 26A I2PAK
STW13N60M2
MOSFET N-CH 600V 11A TO247
IRFH4209DTRPBF
MOSFET N-CH 25V 44A/260A PQFN
IRFS4321-7PPBF
MOSFET N-CH 150V 86A D2PAK
STFI11N65M2
MOSFET N-CH 650V 7A I2PAKFP
STB6N65M2
MOSFET N-CH 650V 4A D2PAK
DMN30H4D0L-13
MOSFET N-CH 300V 250MA SOT23
PH2230DLSX
MOSFET N-CH LFPAK5 POWER-SO8
PHM10030DLSX
MOSFET N-CH LFPAK33