SeriesHEXFET®
PackageTube
Part StatusDiscontinued at Digi-Key
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C86A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs14.7mOhm @ 34A, 10V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4460 pF @ 50 V
FET Feature-
Power Dissipation (Max)350W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK (7-Lead)
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)

RELATED PRODUCT

STFI11N65M2
MOSFET N-CH 650V 7A I2PAKFP
STB6N65M2
MOSFET N-CH 650V 4A D2PAK
DMN30H4D0L-13
MOSFET N-CH 300V 250MA SOT23
PH2230DLSX
MOSFET N-CH LFPAK5 POWER-SO8
PHM10030DLSX
MOSFET N-CH LFPAK33
APT40SM120B
SICFET N-CH 1200V 41A TO247
APT40SM120S
SICFET N-CH 1200V 41A D3PAK
APT40SM120J
MOSFET N-CH 1200V 32A SOT227
R6015ANZC8
MOSFET N-CH 600V 15A TO3PF
R6020ANZC8
MOSFET N-CH 600V 20A TO3PF