SeriesTrenchMOS™
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.5mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs34.7 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4.47 pF @ 12 V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSC-100, SOT-669

RELATED PRODUCT

IPD26N06S2L35ATMA1
MOSFET N-CH 55V 30A TO252-3
IRFH8337TRPBF
MOSFET N-CH 30V 12A/35A PQFN
IRLR7821TRPBF
MOSFET N-CH 30V 65A DPAK
BSZ050N03LSG
BSZ050N03 - 12V-300V N-CHANNEL P
PH8030L,115
MOSFET N-CH 30V 76.7A LFPAK56
IRFR3806PBF
MOSFET N-CH 60V 43A DPAK
FDG328P
MOSFET P-CH 20V 1.5A SC88
IPD060N03LG
OPTLMOS N-CHANNEL POWER MOSFET
IRLL024ZPBF
MOSFET N-CH 55V 5A SOT223
ISL9N312AD3STNL
MOSFET N-CH 30V 50A TO252AA