SeriesTrenchMOS™
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C76.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.9mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.15V @ 1mA
Gate Charge (Qg) (Max) @ Vgs15.2 nC @ 4.5 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2.26 pF @ 12 V
FET Feature-
Power Dissipation (Max)62.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSC-100, SOT-669

RELATED PRODUCT

IRFR3806PBF
MOSFET N-CH 60V 43A DPAK
FDG328P
MOSFET P-CH 20V 1.5A SC88
IPD060N03LG
OPTLMOS N-CHANNEL POWER MOSFET
IRLL024ZPBF
MOSFET N-CH 55V 5A SOT223
ISL9N312AD3STNL
MOSFET N-CH 30V 50A TO252AA
IRF7468PBF
MOSFET N-CH 40V 9.4A 8SO
BSC889N03LSGATMA1
MOSFET N-CH 30V 13A/45A TDSON
IRFR7546PBF
MOSFET N-CH 60V 56A DPAK
YJG53G06A-F1-0100HF
N-CH MOSFET 60V 53A PDFN5060-8L-
MIC94030YM4TR
MOSFET P-CH 16V 1A SOT143