Series*
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs2.7mOhm @ 25A, 4.5V
Vgs(th) (Max) @ Id950mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs78 nC @ 4.5 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds5.85 pF @ 10 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSC-100, SOT-669

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