Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C860A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.6mOhm @ 275A, 10V
Vgs(th) (Max) @ Id4V @ 12mA
Gate Charge (Qg) (Max) @ Vgs2100 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds60000 pF @ 25 V
FET Feature-
Power Dissipation (Max)2500W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageSP6
Package / CaseSP6