SeriesHiPerFET™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C590A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.1mOhm @ 500mA, 10V
Vgs(th) (Max) @ Id6V @ 110mA
Gate Charge (Qg) (Max) @ Vgs2000 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds50000 pF @ 25 V
FET Feature-
Power Dissipation (Max)2200W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeChassis Mount
Supplier Device PackageY3-DCB
Package / CaseY3-DCB

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