SeriesHEXFET®
PackageTape & Reel (TR)Cut Tape (CT)Digi-Reel®
Part StatusNot For New Designs
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs60mOhm @ 38A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs230 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2780 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 170W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RELATED PRODUCT

2SK2723-AZ
N-CHANNEL POWER MOSFET
NTMJS0D9N04CLTWG
MOSFET N-CH 40V 50A/330A 8LFPAK
NTMJS1D6N06CLTWG
MOSFET N-CH 60V 38A/250A 8LFPAK
MTP20N15EG
MOSFET N-CH 150V 20A TO220AB
RF1S30N06LESM9A
N-CHANNEL POWER MOSFET
RFP25N05L
N-CHANNEL, MOSFET
BUK7C10-75AITE,118
MOSFET N-CH 75V 75A D2PAK
IPP60R250CPXK
N-CHANNEL POWER MOSFET
RM110N150HD
MOSFET N-CH 150V 113A TO263-2
RM11N800T2
MOSFET N-CH 800V 11A TO220-3