SeriesAutomotive, AEC-Q101, TrenchMOS™
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs121 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4.7 pF @ 25 V
FET FeatureCurrent Sensing
Power Dissipation (Max)272W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD2PAK
Package / CaseTO-263-7, D²Pak (6 Leads + Tab), TO-263CB

RELATED PRODUCT

IPP60R250CPXK
N-CHANNEL POWER MOSFET
RM110N150HD
MOSFET N-CH 150V 113A TO263-2
RM11N800T2
MOSFET N-CH 800V 11A TO220-3
RM11N800TI
MOSFET N-CHANNEL 800V 11A TO220F
IRFD123PBF
MOSFET N-CH 100V 1.3A 4DIP
MSJPF11N65-BP
MOSFET N-CH 650V 11A TO220F
SIHA5N80AE-GE3
E SERIES POWER MOSFET THIN-LEAD
IRF442
N-CHANNEL POWER MOSFET
IPA65R190E6XKSA1
PFET, 650V, 0.19OHM, 1-ELEMENT,
NTMJS1D0N04CTWG
MOSFET N-CH 40V 46A/300A 8LFPAK