SeriesHEXFET®
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75 V
Current - Continuous Drain (Id) @ 25°C17A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs5.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 150µA
Gate Charge (Qg) (Max) @ Vgs98 nC @ 10 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds4.29 pF @ 25 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-
Mounting TypeSurface Mount
Supplier Device Package8-PQFN (5x6)
Package / Case8-PowerTDFN

RELATED PRODUCT

2SJ142-AZ
P-CHANNEL POWER MOSFET
RFM12N10
N-CHANNEL POWER MOSFET
PSMN2R6-60PS127
N-CHANNEL POWER MOSFET
FDB3652
MOSFET N-CH 100V 9A/61A D2PAK
RM135N100T2
MOSFET N-CH 100V 135A TO220-3
IRFR120PBF-BE3
MOSFET N-CH 100V 7.7A DPAK
IPD65R660CFDAATMA1
MOSFET N-CH 650V 6A TO252-3
R6006JND3TL1
MOSFET N-CH 600V 6A TO252
BUK6E4R0-75C,127
MOSFET N-CH 75V 120A I2PAK