SeriesAutomotive, AEC-Q101, TrenchMOS™
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)75 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs4.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs234 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds15.45 pF @ 25 V
FET Feature-
Power Dissipation (Max)306W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

RELATED PRODUCT

DIT150N03
MOSFET N-CH 30V 150A TO220AB
IPP65R280E6XKSA1
MOSFET N-CH 650V 13.8A TO220-3
IPP65R280E6
N-CHANNEL POWER MOSFET
IPD90P04P4L04ATMA2
MOSFET P-CH 40V 90A TO252-3
IPD90P03P4L04ATMA2
MOSFET P-CH 30V 90A TO252-31
SIHU2N80AE-GE3
MOSFET N-CH 800V 2.9A TO251AA
NTP60N06LG
MOSFET N-CH 60V 60A TO220AB
2N6755
N-CHANNEL POWER MOSFET
SPI16N50C3IN
N-CHANNEL POWER MOSFET
RM20N650TI
MOSFET N-CHANNEL 650V 20A TO220F