SeriesOptiMOS™
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs10mOhm @ 30A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs17 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 15 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-1
Package / Case8-PowerTDFN

RELATED PRODUCT

STQ1NC45R-AP
MOSFET N-CH 450V 500MA TO92-3
STN6N60M2
MOSFET N-CH 600V 5.5A SOT223-2
PSMN6R7-40MLDX
MOSFET N-CH 40V 50A LFPAK33
AOD4189
MOSFET P-CH 40V 40A TO252
CPH3340-TL-E
MOSFET P-CH 20V 5A 3CPH
IRF9392PBF
MOSFET P-CH 30V 9.8A 8SO
IRLL2705PBF
MOSFET N-CH 55V 3.8A SOT223
IRF8736PBF
MOSFET N-CH 30V 18A 8SO
RM50P40LD
MOSFET P-CHANNEL 40V 52A TO252-2
RM20P30D3
MOSFET P-CHANNEL 30V 20A 8DFN