Series-
PackageBulk
Part StatusObsolete
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs45mOhm @ 2.5A, 4V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs16 nC @ 4 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds1.875 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.2W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package3-CPH
Package / CaseSC-96

RELATED PRODUCT

IRF9392PBF
MOSFET P-CH 30V 9.8A 8SO
IRLL2705PBF
MOSFET N-CH 55V 3.8A SOT223
IRF8736PBF
MOSFET N-CH 30V 18A 8SO
RM50P40LD
MOSFET P-CHANNEL 40V 52A TO252-2
RM20P30D3
MOSFET P-CHANNEL 30V 20A 8DFN
RM50P30D3
MOSFET P-CHANNEL 30V 50A 8DFN
IRLR120NPBF
HEXFET POWER MOSFET
NVTFS5C478NLTAG
MOSFET N-CHANNEL 40V 26A 8WDFN
SISH536DN-T1-GE3
N-CHANNEL 30 V (D-S) MOSFET POWE