SeriesOptiMOS™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C43A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs18mOhm @ 33A, 10V
Vgs(th) (Max) @ Id3.5V @ 33µA
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 50 V
FET Feature-
Power Dissipation (Max)71W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package / CaseTO-220-3

RELATED PRODUCT

IRF8010STRLPBF
MOSFET N-CH 100V 80A D2PAK
STP55NF06
MOSFET N-CH 60V 50A TO220AB
FDP8880
MOSFET N-CH 30V 11A/54A TO220-3
PSMN2R0-30PL,127
MOSFET N-CH 30V 100A TO220AB
IPA70R360P7SXKSA1
MOSFET N-CH 700V 12.5A TO220
AOTF2910L
MOSFET N-CH 100V 22A TO220-3F
DN2535N5-G
MOSFET N-CH 350V 500MA TO220-3
FQP5N60C
MOSFET N-CH 600V 4.5A TO220-3
IRL520PBF
MOSFET N-CH 100V 9.2A TO220AB