SeriesQFET®
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds670 pF @ 25 V
FET Feature-
Power Dissipation (Max)100W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3

RELATED PRODUCT

IRL520PBF
MOSFET N-CH 100V 9.2A TO220AB
TP0604N3-G
MOSFET P-CH 40V 430MA TO92-3
HUF76423P3
MOSFET N-CH 60V 35A TO220-3
IRF3205LPBF
MOSFET N-CH 55V 110A TO262
IRF1010NPBF
MOSFET N-CH 55V 85A TO220AB
IRF840BPBF
MOSFET N-CH 500V 8.7A TO220AB
IRLU8743PBF
MOSFET N-CH 30V 160A IPAK
IRFZ24PBF
MOSFET N-CH 60V 17A TO220AB
VP0808L-G
MOSFET P-CH 80V 280MA TO92-3
IRF740STRLPBF
MOSFET N-CH 400V 10A D2PAK