SeriesSTripFET™ II
PackageTube
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)55 V
Current - Continuous Drain (Id) @ 25°C80A (Tc)
Drive Voltage (Max Rds On, Min Rds On)5V, 10V
Rds On (Max) @ Id, Vgs8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs100 nC @ 4.5 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds4350 pF @ 25 V
FET Feature-
Power Dissipation (Max)300W (Tc)
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI2PAK
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

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