SeriesMDmesh™ II
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs550mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds540 pF @ 50 V
FET Feature-
Power Dissipation (Max)70W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageI-PAK
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA

RELATED PRODUCT

IRF9Z34STRRPBF
MOSFET P-CH 60V 18A D2PAK
SI7172DP-T1-GE3
MOSFET N-CH 200V 25A PPAK SO-8
MTM982400BBF
MOSFET N-CH 40V 7A SO8-F1-B
R6009JNJGTL
MOSFET N-CH 600V 9A LPTS
STFI13NK60Z
MOSFET N-CH 600V 13A I2PAKFP
FDMS86150
MOSFET N CH 100V 16A POWER56