SeriesHiPerFET™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.5Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1050 pF @ 25 V
FET Feature-
Power Dissipation (Max)200W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263 (IXFA)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RELATED PRODUCT

R6020JNZ4C13
MOSFET N-CH 600V 20A TO247G
WPB4002
MOSFET N-CH 600V 23A TO3PB
NTE2388
MOSFET N-CHANNEL 200V 18A TO220
G3R160MT12J
SIC MOSFET N-CH 22A TO263-7
2SK2371-A
N-CHANNEL POWER MOSFET
IPP60R099CPXKSA1
MOSFET N-CH 650V 31A TO220-3
R6520KNZ4C13
MOSFET N-CH 650V 20A TO247
C2M0160120D
SICFET N-CH 1200V 19A TO247-3
STP42N65M5
MOSFET N-CH 650V 33A TO220-3
IXFH12N90P
MOSFET N-CH 900V 12A TO247AD