Series-
PackageTray
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C23A (Ta)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs360mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs84 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2.2 pF @ 30 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 220W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-3PB
Package / CaseTO-3P-3, SC-65-3

RELATED PRODUCT

NTE2388
MOSFET N-CHANNEL 200V 18A TO220
G3R160MT12J
SIC MOSFET N-CH 22A TO263-7
2SK2371-A
N-CHANNEL POWER MOSFET
IPP60R099CPXKSA1
MOSFET N-CH 650V 31A TO220-3
R6520KNZ4C13
MOSFET N-CH 650V 20A TO247
C2M0160120D
SICFET N-CH 1200V 19A TO247-3
STP42N65M5
MOSFET N-CH 650V 33A TO220-3
IXFH12N90P
MOSFET N-CH 900V 12A TO247AD
IXTP100N15X4
MOSFET N-CH 150V 100A TO220
IPP60R060C7XKSA1
MOSFET N-CH 600V 35A TO220-3