SeriesPOWER MOS 8™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.4Ohm @ 3A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs80 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds2565 pF @ 25 V
FET Feature-
Power Dissipation (Max)335W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD3PAK
Package / CaseTO-268-3, D³Pak (2 Leads + Tab), TO-268AA

RELATED PRODUCT

IXFH18N60P
MOSFET N-CH 600V 18A TO247AD
MSC360SMA120B
MOSFET SIC 1200 V 360 MOHM TO-24
IPP65R115CFD7AAKSA1
MOSFET N-CH 650V 21A TO220-3
RJK60S7DPK-M0#T0
MOSFET N-CH 600V 30A TO3PSG
6AM13
N-CHANNEL AND P-CHANNEL, MOSFETS
AOK125A60
MOSFET N-CH 600V 28A TO247
SIHP105N60EF-GE3
MOSFET N-CH 600V 29A TO220AB
2SK2372(2)-A
DISCRETE / POWER MOSFET
NTE491T
MOSFET N-CHANNEL 60V 310MA TO237