Series-
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs125mOhm @ 15A, 10V
Vgs(th) (Max) @ Id5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)+30V, -20V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 25 V
FET Feature-
Power Dissipation (Max)227.2W (Ta)
Operating Temperature150°C
Mounting TypeThrough Hole
Supplier Device PackageTO-3PSG
Package / CaseTO-3P-3, SC-65-3

RELATED PRODUCT

6AM13
N-CHANNEL AND P-CHANNEL, MOSFETS
AOK125A60
MOSFET N-CH 600V 28A TO247
SIHP105N60EF-GE3
MOSFET N-CH 600V 29A TO220AB
2SK2372(2)-A
DISCRETE / POWER MOSFET
NTE491T
MOSFET N-CHANNEL 60V 310MA TO237
2SK1629-E
N-CHANNEL POWER MOSFET
IXFH22N65X2
MOSFET N-CH 650V 22A TO247
AOWF095A60
MOSFET N-CH 600V 38A TO262F
STF16N90K5
MOSFET N-CH 900V 15A TO220FP
SIHF068N60EF-GE3
MOSFET N-CH 600V 16A TO220