Series-
PackageBag
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C25mA
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds3.5 pF @ 10 V
FET FeatureStandard
Power Dissipation (Max)200mW (Ta)
Operating Temperature-55°C ~ 125°C
Mounting TypeSurface Mount
Supplier Device Package-
Package / CaseSOT-103

RELATED PRODUCT

FQH90N10V2
N-CHANNEL POWER MOSFET
TSM7N90CI C0G
MOSFET N-CH 900V 7A ITO220AB
SIHA186N60EF-GE3
MOSFET N-CH 600V 8.4A TO220
IPA65R099C6XKSA1
MOSFET N-CH 650V 38A TO220
IPI65R099C6XKSA1
COOLMOS 650V N-CHANNEL
STW28N60M2
MOSFET N-CH 600V 24A TO247
IRFP9240
MOSFET P-CH 200V 12A TO247-3
FDP7045L
N-CHANNEL POWER MOSFET
2SK1449
N-CHANNEL SILICON MOSFET
SIHB21N80AE-GE3
MOSFET N-CH 800V 17.4A D2PAK