SeriesCoolMOS™
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C38A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs99mOhm @ 12.8A, 10V
Vgs(th) (Max) @ Id3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs127 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2.78 pF @ 100 V
FET Feature-
Power Dissipation (Max)278W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO262-3-1
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA

RELATED PRODUCT

STW28N60M2
MOSFET N-CH 600V 24A TO247
IRFP9240
MOSFET P-CH 200V 12A TO247-3
FDP7045L
N-CHANNEL POWER MOSFET
2SK1449
N-CHANNEL SILICON MOSFET
SIHB21N80AE-GE3
MOSFET N-CH 800V 17.4A D2PAK
HAF1009-90STL
P-CHANNEL POWER MOSFET
FS50VS-3-T11
N-CHANNEL POWER MOSFET
2SK1165-E
N-CHANNEL POWER MOSFET
FQAF11N90
MOSFET N-CH 900V 7.2A TO3PF
R6009JNXC7G
MOSFET N-CH 600V 9A TO220FM