SeriesAutomotive, AEC-Q101, UltraFET™
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C75A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs16mOhm @ 75A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs480 nC @ 20 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds7.69 pF @ 25 V
FET Feature-
Power Dissipation (Max)500W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3

RELATED PRODUCT

STFU10N80K5
MOSFET N-CH 800V 9A TO220FP
SIHA17N80AE-GE3
MOSFET N-CH 800V 7A TO220
FDA20N50
MOSFET N-CH 500V 22A TO3PN
BFL4004
MOSFET N-CH 800V 4.3A TO220FI
IRF244
N-CHANNEL POWER MOSFET
SIHP17N80AE-GE3
MOSFET N-CH 800V 15A TO220AB
R6007JNXC7G
MOSFET N-CH 600V 7A TO220FM
FDAF75N28
MOSFET N-CH 280V 46A TO3PF
BTS114AE3045A
N-CHANNEL POWER MOSFET