SeriesMDmesh™ K5
PackageTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds635 pF @ 100 V
FET Feature-
Power Dissipation (Max)30W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220FP
Package / CaseTO-220-3 Full Pack

RELATED PRODUCT

SIHA17N80AE-GE3
MOSFET N-CH 800V 7A TO220
FDA20N50
MOSFET N-CH 500V 22A TO3PN
BFL4004
MOSFET N-CH 800V 4.3A TO220FI
IRF244
N-CHANNEL POWER MOSFET
SIHP17N80AE-GE3
MOSFET N-CH 800V 15A TO220AB
R6007JNXC7G
MOSFET N-CH 600V 7A TO220FM
FDAF75N28
MOSFET N-CH 280V 46A TO3PF
BTS114AE3045A
N-CHANNEL POWER MOSFET
BTS114A E3045A
N-CHANNEL POWER MOSFET