Series-
PackageBulk
Part StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs65mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) (Max) @ Vgs11 nC @ 4.5 V
Vgs (Max)-
Input Capacitance (Ciss) (Max) @ Vds750 pF @ 10 V
FET Feature-
Power Dissipation (Max)1.05W (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package6-TSOP
Package / CaseSOT-23-6 Thin, TSOT-23-6

RELATED PRODUCT

RFP12N06RLE
N-CHANNEL POWER MOSFET
FQD60N03LTM
N-CHANNEL POWER MOSFET
NTB6N60
N-CHANNEL POWER MOSFET
FQB5N60CTM
4.5A, 600V, 2OHM, N CHANNEL , D2
FQD6N50CTF
MOSFET N-CH 500V 4.5A DPAK
BUZ32HXKSA1
N-CHANNEL POWER MOSFET
NVTFS5820NLWFTAG
60V, 0.0115OHM, N-CHANNEL, MOSF
IRF7834PBF
MOSFET N-CH 30V 19A 8SO
FDB20AN06A0
MOSFET N-CH 60V 9A/45A TO263AB
IRF820
2.5A, 500V, 3.000 OHM, N-CHANNEL