SeriesQFET®
PackageBulk
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.5Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs19 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds670 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.13W (Ta), 100W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263AB)
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

RELATED PRODUCT

FQD6N50CTF
MOSFET N-CH 500V 4.5A DPAK
BUZ32HXKSA1
N-CHANNEL POWER MOSFET
NVTFS5820NLWFTAG
60V, 0.0115OHM, N-CHANNEL, MOSF
IRF7834PBF
MOSFET N-CH 30V 19A 8SO
FDB20AN06A0
MOSFET N-CH 60V 9A/45A TO263AB
IRF820
2.5A, 500V, 3.000 OHM, N-CHANNEL
BUK653R7-30C,127
PFET, 100A I(D), 30V, 0.0072OHM,
FQB19N10LTM
MOSFET N-CH 100V 19A D2PAK
BUK6507-55C,127
PFET, 100A I(D), 55V, 0.0105OHM,
NDPL070N10BG
MOSFET N-CH 100V 70A TO220-3