Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)25 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs3.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs30 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1.781 pF @ 12 V
FET Feature-
Power Dissipation (Max)79W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package / CaseSC-100, SOT-669

RELATED PRODUCT

NTHD5904NT1G
MOSFET N-CH 20V 2.5A CHIPFET
IRFI630BTU
N-CHANNEL POWER MOSFET
SI6466DQ
N-CHANNEL POWER MOSFET
NTD4856NT4G
MOSFET N-CH 25V 13.3A/89A DPAK
HUF75337P3
MOSFET N-CH 55V 75A TO220-3
IPS050N03LG
N-CHANNEL POWER MOSFET
HUF76013D3S
MOSFET N-CH 20V 20A TO252AA
IPU80R2K8CEBKMA1
MOSFET N-CH 800V 1.9A TO251-3
NTB75N03R
MOSFET N-CH 25V 9.7A/75A D2PAK
RSR025P03HZGTL
MOSFET P-CH 30V 2.5A TSMT3