Series-
PackageBulk
Part StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C2.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Rds On (Max) @ Id, Vgs65mOhm @ 3.3A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs6 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds465 pF @ 16 V
FET Feature-
Power Dissipation (Max)640mW (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageChipFET™
Package / Case8-SMD, Flat Lead

RELATED PRODUCT

IRFI630BTU
N-CHANNEL POWER MOSFET
SI6466DQ
N-CHANNEL POWER MOSFET
NTD4856NT4G
MOSFET N-CH 25V 13.3A/89A DPAK
HUF75337P3
MOSFET N-CH 55V 75A TO220-3
IPS050N03LG
N-CHANNEL POWER MOSFET
HUF76013D3S
MOSFET N-CH 20V 20A TO252AA
IPU80R2K8CEBKMA1
MOSFET N-CH 800V 1.9A TO251-3
NTB75N03R
MOSFET N-CH 25V 9.7A/75A D2PAK
RSR025P03HZGTL
MOSFET P-CH 30V 2.5A TSMT3
BUK9M8R5-40HX
MOSFET N-CH 40V 40A LFPAK33